SiC Coated Graphite Base Carriers


SiC Coated Graphite Carriers

Product Description

We maintain very close tolerances when applying the SiC coating, using high-precision machining to ensure a uniform susceptor profile. We also produce materials with ideal electrical resistance properties for use in inductively heated systems. All finished components come with a purity and dimensional compliance certificate.

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer. The SIC formed is firmly bonded to the graphite base, giving the graphite base special properties, thus making the surface of the graphite compact, Porosity-free, high temperature resistance, corrosion resistance and oxidation resistance.

2

CVD process delivers extremely high purity and theoretical density of SiC coating with no porosity. What’s more, as silicon carbide is very hard, it can be polished to a mirror-like surface. CVD silicon carbide (SiC) coating delivered several advantages including ultra-high purity surface and extremely wear durability. As the coated products have great performance in high vacuum and high temperature circumstance, they are ideal for applications in semiconductor industry and other ultra-clean environment. We also provide pyrolytic graphite (PG) products.

Main features:

1. High temperature oxidation resistance:

the oxidation resistance is still very good when the temperature is as high as 1600 C.

2. High purity: made by chemical vapor deposition under high temperature chlorination condition.

3. Erosion resistance: high hardness, compact surface, fine particles.

4. Corrosion resistance: acid, alkali, salt and organic reagents.

Main Specifications of CVD-SIC Coatings:

SiC-CVD

Density

(g/cc)

3.21

Flexural strength

(Mpa)

470

Thermal expansion

(10-6/K)

4

Thermal conductivity

(W/mK)

300

Application: CVD silicon carbide coating has been applied in semiconductor industries already, such as MOCVD tray, RTP and oxide etching chamber since silicon nitride has great thermal shock resistance and can withstand high energy plasma.
-Silicon carbide is widely used in semiconductor and coating.

Supply Ability:

10000 Piece/Pieces per Month
Packaging & Delivery:
Packing:Standard & Strong Packing
Poly bag + Box + Carton + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lead Time:

Quantity(Pieces) 1 – 1000 >1000
Est. Time(days) 15 To be negotiated